Vishay Intertechnology Releases New 1 A and 2 A Gen 7 1200 V FRED Pt® Hyperfast Rectifiers in eSMP® Series SMF (DO-219AB) Package Lowering Switching Losses, Devices Combine Low Qrr Down to 105 nC With VF of 1.10 V While Reducing Parasitic Capacitance and Recovery Time MALVERN, Pa., Nov. 06, 2024 (GLOBE NEWSWIRE) -- Vishay...

Vishay Intertechnology to Bring Industry-Leading SiC MOSFET Technology to APEC 2024 Taking center stage in booth 1607 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs.

Global Silicon Carbide MOSFETs Market is Expected to Accelerate at a Whopping 29.8% CAGR, Reaching US$ 13.5 Billion by 2031 | Transparency Market Research Wilmington, Delaware, United States, June 14, 2023 (GLOBE NEWSWIRE) -- Transparency Market Research Inc. - The global silicon carbide MOSFETs market was valued at US$ 1.4 Bn in 2022. It is projected...

ROHM’s New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) -- ROHM announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main...