Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry’s Lowest RDS(ON) of 5.6 mΩ and RDS(ON)*Qg FOM of 336 mΩ*nC
November 20, 2024 11:00 ET
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Vishay Intertechnology, Inc.
MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today...
Vishay Intertechnology 60 V and 80 V N-Channel MOSFETs in PowerPAK® 8x8L Deliver Best in Class RDS(ON) Down to 0.65 mΩ
January 31, 2022 11:00 ET
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Vishay Intertechnology, Inc.
MALVERN, Pa., Jan. 31, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new n-channel TrenchFET® MOSFETs that increase power density, efficiency, and...
Vishay Intertechnology World’s Best Automotive -80 V P-Channel MOSFET Increases Efficiency and Power Density
April 07, 2021 11:00 ET
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Vishay Intertechnology, Inc.
MALVERN, Pa., April 07, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the world’s best AEC-Q101 qualified p-channel -80 V TrenchFET® MOSFET. With the lowest...
Vishay Intertechnology Launches Industry’s First AEC-Q101 Qualified 60 V MOSFET in the PowerPAK® SO-8L Dual Asymmetric Package
November 09, 2020 11:09 ET
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Vishay Intertechnology, Inc.
MALVERN, Pa., Nov. 09, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced an AEC-Q101 qualified n-channel 60 V MOSFET that is the industry’s first such device in the...
Vishay Intertechnology 60 V TrenchFET® MOSFET Offers On-Resistance Down to 1.7 mΩ, Reduces Power Losses to Increase Efficiency
February 18, 2019 11:00 ET
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Vishay Intertechnology, Inc.
MALVERN, Pa., Feb. 18, 2019 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 60 V TrenchFET® Gen IV n-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK® SO-8...