Dublin, Nov. 21, 2013 (GLOBE NEWSWIRE) -- Research and Markets (http://www.researchandmarkets.com/research/bb2mjt/global)
has announced the addition of the "Global
Ferroelectric RAM Market 2012-2016" report to their
offering.
TechNavio's analysts forecast the Global Ferroelectric
RAM market to grow at a CAGR of 18.2 percent over the period
2012-2016. One of the key factors contributing to this market
growth is the high demand in wireless applications. The Global
Ferroelectric RAM market has also been witnessing the increased
investment in RandD. However, the time to market pressure could
pose a challenge to the growth of this market.
The key vendors dominating this market space are Fujitsu Ltd. and
Ramtron International Corp.
The other vendors mentioned in the report are IBM Corp., and Texas
Instruments Inc.
Commenting on the report, an analyst from a hardware team said:
''The Global Ferroelectric random access memory (FRAM) market is
witnessing the trend of increased investment in the RandD of FRAM.
Some of the leading vendors in the market such as Ramtron, Texas
Instruments, and Fujitsu have increased their investment in the
RandD of FRAM. These vendors have identified huge potential in this
market, which is motivating them to invest more in RandD. Also, the
vendors need to set the proper technology standards, which can be
done through an effective RandD process. Thus, the increased
investment in the RandD of FRAM will lead to the development of
highly efficient products.''
According to the report, one of the major growth drivers is the
high demand for FRAM in wireless applications. FRAM is widely used
in several types of wireless devices, among which battery-powered
wireless sensors are one of the major target products generating
significant revenue in the market.
For more information visit http://www.researchandmarkets.com/research/bb2mjt/global
Research and Markets
Laura Wood, Senior Manager.
press@researchandmarkets.com
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Sector:
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