Global 3D NAND Flash Memory Market is Expected to Reach USD 95.92 Billion by 2025 : Fior Markets

Global 3D NAND Flash Memory Market by Type (Single-Level Cell, Multi-Level Cell, Triple-Level Cell), End User (Automotive, Consumer Electronics, Others), Application, Region Global Industry Analysis, Market Size, Share, Growth, Trends, and Forecast 2018 to 2025

| Source: Fior Markets Fior Markets

New Jersey, NJ, Oct. 22, 2019 (GLOBE NEWSWIRE) -- The key contributing factors for the market growth are growing demand for consumer electronics and wearable devices and increasing the use of advanced electronics and safety measures in the automotive vertical. The global 3D NAND flash memory market is expected to grow from USD 10.23 Billion in 2017 to USD 95.92 Billion by 2025 at a CAGR of 32.3% during the forecast period from 2018-2025, according to the new report published by Fior Markets.

3D NAND flash is a kind of flash memory that includes stacking memory cells over one another to give a higher limit/volume proportion in a little physical space. It augments electrical productivity by shortening the interconnecting length between the cells. It is a vertical execution of the NAND flash cell memory. With this vertical usage of the cell memory, 3D NAND flash memory offers expanded capacity thickness of the memory in contrast to planar NAND flash memory. Moreover, memory chipmakers are moving from planar NAND to 3D NAND, because the innovation offers a higher limit in a little space.

Rising demand for solid-state drives (SSDs) with increasing memory space in devices, such as laptops, tablets, and smartphones, high demand for high-performance computers and an increase in requirement of small-form-factor has generated the scope for R&D for such memory devices is fuelling the growth of the market. But high manufacturing cost may hamper the growth of 3D NAND flash memory market. However, high demand for high-performance computers will augment the growth of the market in the coming years.

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Key players operating in the global 3D NAND flash memory market include Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, SanDisk Corporation, and among others. To enhance their market position in the global 3D NAND flash memory market, the key players are now focusing on adopting strategies such as product innovations, mergers & acquisitions, recent developments, joint venture, collaborations, and partnerships.

  • For instance, in August 2019, Toshiba Memory Corporation, the world leader in memory solutions announced the launch of a new Storage Class Memory (SCM) solution: XL-FLASHTM. Based on the company’s innovative BiCS FLASHTM 3D flash memory technology with 1bit-per-cell SLC, XL-FLASHTM brings low latency and high performance to data center and enterprise storage. Sample shipments will start in September, with mass production expected to begin in 2020.
  • For instance, in August 2019, Toshiba Memory Holdings Corporation signed a definitive agreement with LITE-ON Technology Corporation to acquire its Solid State Drive (SSD) business at USD 165 million. This acquisition will enable Toshiba to rebrand as Kioxia Holdings Corporation on October 1, 2019.
  • For instance, in October 2017, AT&S expanded its technical competence by investing around USD 46.8 Million to produce high-frequency PCBs for autonomous driving applications at the existing sites in India and Austria.
  • For instance, in 2015, Micron Technology, Inc. and Intel Corporation revealed the availability of their 3D NAND technology, the world's highest-density flash memory. Flash is the storage technology used inside the lightest laptops, fastest data centers, and nearly every cell phone, tablet and mobile device. This new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically with extraordinary precision to create storage devices with three times higher capacity1 than competing NAND technologies.

The triple-level cell segment held the largest market share of 48.90% in 2017

The type segment is classified into a single-level cell, multi-level cell, and triple-level cell. The triple-level cell segment dominated the 3D NAND flash memory market in 2017.  It offers a lower price per gigabyte as compared to SLC and MLC flash.

Consumer electronics segment valued around USD 3.80 Billion in 2017

The end-user segment is divided into segments such as automotive, consumer electronics, enterprise, healthcare, and others. The consumer electronics segment has dominated the market in 2017 because of its increased applications in smartphones, tablets, laptops, and cameras.

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Smartphone & tablets segment held the largest market share of 39.20% in 2017

The application segment includes cameras, laptop & PCs, smartphone & tablets, and others. Smartphone & tablets segment dominated the market in 2017. Owing to the advancements in mobile technology and an increase in the penetration of smartphones, there is a substantial increment in the demand for the product.

Regional Segment Analysis of the 3D NAND flash memory Market

  • North America (U.S. , Canada, Mexico)
  • Europe (Germany, France, U.K., Italy, Spain, Rest of the Europe)
  • Asia-Pacific (China, Japan India, Rest of APAC)
  • South America (Brazil and Rest of South America)
  • Middle East and Africa (UAE, South Africa, Rest of MEA)

Asia Pacific region dominated the global 3D NAND flash memory market with USD 4.21 Billion in 2017 whereas the North America region held the second dominant position in the market. The Asia-Pacific region is dominating as the rise in demand for lightweight memory design and high durability has enhanced the adoption of 3D NAND flash memory systems in enterprise storage and automotive industries, thereby providing lucrative opportunities for the market growth. North America is the rapidly growing region as it is advanced in terms of development and adoption of innovative technologies in the field of semiconductors.

About the report:

The global 3D NAND flash memory market is analysed on the basis of value (USD Million), volume (Units), consumption (Units), import (Units), and export (Units). All the segments have been analyzed on global, regional and country basis. The study includes the analysis of more than 30 countries for each segment. The report offers in-depth analysis of driving factors, opportunities, restraints, and challenges for gaining the key insight of the market. The study includes porter’s five forces model, attractiveness analysis, raw material analysis, supply, demand analysis, competitor position grid analysis, distribution and marketing channels analysis.

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3D NAND Flash Memory Market 3D NAND Flash Memory Industry Single-Level Cell Multi-Level Cell Triple-Level Cell

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