New York, USA, June 22, 2023 (GLOBE NEWSWIRE) -- According to the research report published by Market Research Future (MRFR), “GaN Semiconductor Devices Market Information by Technology, Components, Application – Market Forecast Till 2030”. The GaN Semiconductor Devices Market could thrive at a rate of 5.8 % between 2022 and 2030. The market size will be reaching around USD 29.6 Billion by the end of the year 2030.
GaN Semiconductor Devices Market Key Players
Prominent market players profiled in the global GaN Semiconductor Devices market report include
- RF Micro Devices Corporation
- Osram Opto-semiconductors
- Cree Incorporated
- Toshiba
- Gallia Semiconductor
- ROHM Company Limited
- NXP Semiconductors
- Philips
- Nichia Corporation.
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Scope of the Report - GaN Semiconductor Devices Market:
| Report Metrics | Details |
| Market Size by 2030 | USD 29.6 Billion |
| CAGR during 2022-2030 | 5.8% |
| Base Year | 2021 |
| Forecast | 2022-2030 |
| Key Market Opportunities | Improving standards of the latest and advanced GaN technology. |
| Key Market Dynamics | Rising demand for wireless communications and high bandwidth speeds. The increased integration in LEDs, private home battery chargers, and other modern active devices. |
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GaN Semiconductor Devices Market Drivers
There are three key driving factors fueling the growth of the GaN Semiconductor Devices market. Firstly, the demand for energy-efficient power electronics is increasing across various industries, including consumer electronics, automotive, and renewable energy. GaN devices provide superior power efficiency, leading to reduced energy consumption and environmental impact. Secondly, the rapid expansion of 5G networks and the demand for high-speed data transmission require GaN-based RF devices with higher power handling capabilities and faster switching speeds. Lastly, the growing electric vehicle market drives the adoption of GaN Semiconductor Devices in vehicle charging systems and power electronics, supporting the transition to cleaner and more sustainable transportation.
Restraints and Challenges
There are certain market restraints for GaN Semiconductor Devices. One significant challenge is the higher manufacturing cost compared to traditional semiconductor materials like silicon. This cost factor can limit the widespread adoption of GaN devices, particularly in price-sensitive applications. Additionally, the complexity of the fabrication process and the requirement for specialized expertise pose barriers to market growth. Moreover, the reliability and durability of GaN devices need to be addressed to build trust and confidence among end-users, ensuring long-term performance and reliability.
GaN Semiconductor Devices Market Segmentation
- By Type: The Type in the market includes Gallium Nitride, Power Semiconductors, Opto Semiconductors, RF semiconductors
- By Size: The size includes 2 Inches, 3 Inches, 6 Inches
- By Device Type: The Device type includes Diode, Modern Transistors, Power ICs, Amplifiers, Power Drivers
- By End Users: End-user includes Advanced Aerospace and Defence, Modern Automotive, Medical
GaN Semiconductor Devices Market COVID-19 Analysis
The COVID-19 pandemic has had both positive and negative effects on the GaN Semiconductor Devices market. The global supply chains and manufacturing operations faced significant disruptions during the pandemic, which resulted in delays in product launches and deployments. Many companies experienced challenges in sourcing raw materials, components, and equipment, leading to production slowdowns and even temporary shutdowns. These disruptions had a direct impact on the availability of GaN semiconductor devices in the market.
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However, the pandemic also acted as a catalyst for digital transformation across various industries. As businesses and individuals adapted to remote working and online solutions, there was an increased demand for data centers, telecommunications infrastructure, and remote collaboration tools. GaN devices, known for their high efficiency and power handling capabilities, became essential components in these applications. GaN-based power amplifiers, RF devices, and high-speed transistors were in demand to support the growing data needs and ensure reliable connectivity.
GaN Semiconductor Devices Market Regional Analysis
The GaN Semiconductor Devices market is highly influenced by regional dynamics, and North America stands out as a significant player in this industry. The region boasts a substantial market share, primarily due to the presence of key players like Cree Incorporated and RF Micro Devices Corporation. These companies have established themselves as leaders in GaN technology, driving innovation and advancements in the field. Additionally, North America benefits from its advanced technology infrastructure, which enables the widespread adoption of GaN devices across various industries.
The high adoption of GaN devices in North America can be attributed to their superior performance and efficiency compared to traditional semiconductor materials. GaN Semiconductor Devices find applications in sectors such as power electronics, RF systems, and lighting, providing significant advantages in terms of power efficiency, high-frequency operation, and temperature resistance. The region's industries, including consumer electronics, automotive, aerospace, and defense, benefit from the enhanced capabilities offered by GaN devices, leading to their widespread adoption.
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Industry Updates
June 2023 - Cree Incorporated announced the release of their new GaN-on-Silicon Carbide (SiC) RF transistor. This development showcases the continuous advancements in GaN technology, particularly in the RF sector, enabling higher performance and efficiency in wireless communication systems.
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