Micron UFS 4.0 Mobile Storage Built on 232-Layer 3D NAND Delivers Industry’s Fastest Performance for Smartphones
21 juin 2023 09h00 HE
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Micron Technology, Inc.
BOISE, Idaho, June 21, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU) announced today that it is now delivering qualification samples of its Universal Flash Storage (UFS) 4.0 mobile...
Embedded Non-Volatile Memory Market to Grow at a CAGR of 15.3% from 2021 to 2031, Reaching US$ 218.6 Million: As per TMR Study
18 avr. 2023 16h30 HE
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Transparency Market Research
Wilmington, Delaware, United States , April 19, 2023 (GLOBE NEWSWIRE) -- Transparency Market Research Inc. - The global embedded non-volatile memory market stood at US$ 61.1 million in 2022 and the...
Micron Ships World’s First 232-Layer NAND, Extends Technology Leadership
26 juil. 2022 09h00 HE
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Micron Technology, Inc.
BOISE, Idaho, July 26, 2022 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced that it has begun volume production of the world’s first 232-layer NAND, built with...
Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences
29 juil. 2021 08h00 HE
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Micron Technology, Inc.
BOISE, Idaho, July 29, 2021 (GLOBE NEWSWIRE) -- Micron Technology, Inc., (Nasdaq: MU) announced today it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS)...
Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry’s First 176-Layer NAND and 1-Alpha DRAM
01 juin 2021 21h10 HE
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Micron Technology, Inc.
TAIPEI, Taiwan, June 01, 2021 (GLOBE NEWSWIRE) -- Computex -- Micron Technology, Inc. (Nasdaq: MU), today unveiled memory and storage innovations across its portfolio based on its industry-leading...
Lam Research Advances Next Generation 3D Memory Manufacturing with Revolutionary New Etch Technology
27 janv. 2021 16h10 HE
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Lam Research Corporation
Vantex™ redefines high aspect ratio etching with new innovations in technology and Equipment Intelligence® enabling chipmakers to progress 3D NAND and DRAM roadmaps FREMONT, Calif., Jan. 27, 2021 ...
绿芯将在重庆ICCAD-2020上展示其全面的工业级固态硬盘和存储卡产品
08 déc. 2020 09h00 HE
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Greenliant
中国，重庆和美国，硅谷, Dec. 08, 2020 (GLOBE NEWSWIRE) -- 绿芯将于12月10日至11日在重庆举行的ICCAD-2020（中关村IC Park展台141-142和153-154展位）上展示其高可靠固态存储产品。其ArmourDrive®，NANDrive®和工业企业级固态硬盘产品组合专注于高耐久性、长数据保持力和长生命周期支持，可满足严苛应用环境的客户需求。 ...
Greenliant Displays Broad Portfolio of Industrial Grade SSDs and Memory Cards at ICCAD 2020
08 déc. 2020 09h00 HE
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Greenliant
SANTA CLARA, Calif. and CHONGQING, China, Dec. 08, 2020 (GLOBE NEWSWIRE) -- Greenliant’s high reliability solid state storage products will be on display at ICCAD 2020 in Chongqing, December 10-11,...
Micron Ships World’s First 176-Layer NAND, Delivering A Breakthrough in Flash Memory Performance and Density
09 nov. 2020 16h01 HE
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Micron Technology, Inc.
BOISE, Idaho, Nov. 09, 2020 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced that it has begun volume shipments of the world’s first 176-layer 3D NAND flash memory,...
绿芯开始供样用于高性能数据存储的低功耗、无外置DRAM NVMe M.2 2280 ArmourDrive™固态硬盘样品
02 nov. 2020 09h00 HE
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Greenliant
中国，北京和美国，硅谷, Nov. 02, 2020 (GLOBE NEWSWIRE) -- 绿芯已开始向用户提供无外置DRAM NVMe M.2 2280 ArmourDrive™固态硬盘的样品，适用于高性能、低功耗的数据存储应用。 新推出的88 PX系列NVMe M.2 2280 ArmourDrive 固态硬盘使用高质量的工业TLC（每单元3bit）3D...