ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation Santa Clara, CA and Kyoto, Japan, May 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will present new power semiconductor solutions, with a special focus on wide bandgap...

ROHM's EcoGaN™ Adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a Brand of Delta Santa Clara, CA and Kyoto, Japan, Feb. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from...

ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss Santa Clara, CA and Kyoto, Japan, Aug. 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The...

ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other...

ROHM Starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage Santa Clara, CA and Kyoto, Japan, March 22, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced their new 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) which increase gate withstand voltage...