NXP and ZF Collaborate on SiC-Based Traction Inverters to Boost Electric Vehicle Powertrains_Image
NXP and ZF Collaborate on SiC-Based Traction Inverters to Boost Electric Vehicle Powertrains
04 juin 2024 03h00 HE | NXP USA, Inc.
NXP’s high-voltage isolated gate driver family is integrated into ZF’s next-generation 800-V SiC-based traction inverter solutions for EVsThe collaboration aims at improving safety, efficiency, range...
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Microchip Expands its mSiC™ Solutions with the 3.3 kV XIFM Plug-and-Play mSiC Gate Driver to Accelerate the Adoption of High-Voltage SiC Power Modules
20 févr. 2024 08h00 HE | Microchip Technology Inc.
CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications...
ROHM's New BD2311NVX-LB Gate Driver IC, Optimized for GaN Devices
ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
08 nov. 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive...
ROHM's BM3G0xxMUV-LB power stage ICs feature built-in 650V GaN HEMTs and gate drivers
ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss
31 août 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Aug. 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The...
BD7Fx05EFJ-C Isolated Flyback DC-DC Converter
ROHM’s Isolated DC-DC Converters for xEVs Reduce Application Size and Minimize Noise Design Countermeasures
25 janv. 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Jan. 25, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the BD7Fx05EFJ-C isolated flyback DC-DC converter (BD7F105EFJ-C, BD7F205EFJ-C) optimized for...
Hitachi Astemo to Use ROHM's SiC MOSFETs and Gate Driver ICs
ROHM’s Fourth Generation SiC MOSFETs to be Used in Hitachi Astemo’s Inverters for Electric Vehicles
10 janv. 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Jan. 10, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its new fourth generation SiC MOSFETs and gate driver ICs in electric vehicle...
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Allegro MicroSystems Announces 4x4mm 50 V Full-Bridge Gate Drivers for Automotive and Industrial Applications
17 mai 2022 08h30 HE | Allegro MicroSystems
Manchester, NH, USA, May 17, 2022 (GLOBE NEWSWIRE) -- Allegro MicroSystems, Inc. (“Allegro”) (Nasdaq: ALGM), a global leader in sensing and power solutions for motion control and energy-efficient...
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Microchip to Provide Silicon Carbide MOSFETs and Digital Gate Drivers for Mersen’s SiC Power Stack Reference Design
08 déc. 2021 08h05 HE | Microchip Technology Inc.
CHANDLER, Ariz., Dec. 08, 2021 (GLOBE NEWSWIRE) -- E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up...
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Reduce Switching Losses up to 50% While Accelerating Time to Market with the First Fully Configurable Digital Gate Driver for Silicon Carbide MOSFETs – Now Production Ready
20 sept. 2021 08h05 HE | Microchip Technology Inc.
CHANDLER, Ariz., Sept. 20, 2021 (GLOBE NEWSWIRE) -- As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power...
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Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability
16 mars 2020 08h09 HE | Microchip Technology Inc.
CHANDLER, Ariz., March 16, 2020 (GLOBE NEWSWIRE) -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to...