Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)*Qg FOM of 2.8 Ω*nC
21 févr. 2022 11h00 HE
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Vishay Intertechnology, Inc.
MALVERN, Pa., Feb. 21, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the latest device in its fourth generation of 600 V E Series power MOSFETs. Providing high...
Global Insulated-Gate Bipolar Transistors (IGBT) Market Report 2021-2026 - Rising Adoption of Smart Grids and Electric Vehicles Likely to Drive Market Growth
10 févr. 2022 08h28 HE
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Research and Markets
Dublin, Feb. 10, 2022 (GLOBE NEWSWIRE) -- The "Insulated-Gate Bipolar Transistors (IGBT) - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering....
Outlook on the GaN Power Device Global Market to 2026 - by Device Type, Voltage Range, Application, End-use Industry and Region
18 nov. 2021 05h58 HE
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Research and Markets
Dublin, Nov. 18, 2021 (GLOBE NEWSWIRE) -- The "GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2021-2026" report has been added to...
Boston Semi Equipment Receives Orders for Industry-Leading High Power IC Handling Solutions
02 nov. 2021 08h00 HE
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Boston Semi Equipment
Zeus Handlers Deliver Highest Test Voltages Possible in Production BILLERICA, Mass., Nov. 02, 2021 (GLOBE NEWSWIRE) -- Boston Semi Equipment (BSE), a global semiconductor test handler company,...
ROHM’s Latest Generation of Dual MOSFETs: Delivering Class-Leading Low ON Resistance
13 oct. 2021 17h00 HE
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Oct. 13, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the QH8Mx5/SH8Mx5 series of dual-MOSFET products (N-channel + P-channel) featuring ±40V/±60V...
Power Discretes (IGBT + MOSFET): Global & China Market Forecasts to 2025
21 sept. 2021 07h48 HE
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Research and Markets
Dublin, Sept. 21, 2021 (GLOBE NEWSWIRE) -- The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering. In...
Reduce Switching Losses up to 50% While Accelerating Time to Market with the First Fully Configurable Digital Gate Driver for Silicon Carbide MOSFETs – Now Production Ready
20 sept. 2021 08h05 HE
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Microchip Technology Inc.
CHANDLER, Ariz., Sept. 20, 2021 (GLOBE NEWSWIRE) -- As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power...
First Aerospace-qualified Baseless Power Module Family Improves Aircraft Electrical System Efficiency
03 août 2021 08h05 HE
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Microchip Technology Inc.
CHANDLER, Ariz., Aug. 03, 2021 (GLOBE NEWSWIRE) -- In the race to reduce aircraft emissions, developers increasingly are moving toward more efficient designs including electrical systems that...
Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Solutions Now Available at 1700V
27 juil. 2021 08h05 HE
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Microchip Technology Inc.
CHANDLER, Ariz., July 27, 2021 (GLOBE NEWSWIRE) -- Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,...
ROHM’s New 80V Withstand, 5A Output Power Supply ICs
30 juin 2021 17h00 HE
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, June 30, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced two new buck DC/DC converter ICs with built-in MOSFET – the BD9G500EFJ-LA and BD9F500QUZ –...