Contact Information: Contacts: Naresh Baliga Inapac Technology, Inc. Tel: 408-434-6530 x242 Email Contact Joe Fowler FS Communications Tel: 650-691-1488 Email Contact
Inapac Technology Releases New 16Mb DRAM Design for Mobile Applications That Reduces SiP/MCP Cost
Design Optimized to Reduce Stacked Die Memory Integration Cost to Less Than $0.50
| Source: Inapac
SAN JOSE, CA -- (MARKET WIRE) -- April 25, 2007 -- Inapac Technology, Inc., the leading provider
of DRAM solutions for system-in-package (SiP) and multi-chip-package (MCP)
devices, today announced the release of a 16Mb (megabit) SDRAM design
optimized for the mobile handset market. Based on Inapac's proven,
high-volume SiPFLOW™ platform, the design incorporates a unique
design-for-test (DFT) architecture and production methodology that enable
SiP and MCP producers to minimize cost of ownership while achieving
exceptional levels of production quality and reliability. Inapac estimates
that the total cost of incorporating the new 16Mb memory die would be less
than $0.50 per SiP/MCP in volume production. This cost-effective
integration of 16Mb of memory into SiPs/MCPs further extends their reach in
high-volume consumer markets, where their average selling price is $5.00 or
less.
Inapac's SiPFLOW platform is licensed to SiP and MCP suppliers addressing
such applications as feature-rich cellular handsets, personal media players
and LCD-based displays.
"Our existing 16Mb SDRAM has enabled more than 50 million SiP devices with
exceptional quality and reliability. The new design enables smaller
packages, lower power and lower-cost implementations," said Naresh Baliga,
vice president of marketing for Inapac. "The new design offers a
bond-pad-compatible transition from the existing design, and is
manufactured on the proven, high-volume 0.12-micron DRAM wafer foundry from
ProMOS Technology."
The 16Mb 0.12-micron design will be available for sampling in Q2 2007, with
volume production planned for Q1 2008.
SiP-Optimized Memory Design
The Inapac SiPFLOW platform delivers the lowest cost of ownership for
stacked memory integration. It includes a family of memory designs, a
proven production methodology, and specialized SiP memory testing services
and support. The memory designs are optimized for SiP integration,
including small footprint, low power consumption, and high-bandwidth
operation via a wide bus interface. They feature edge bond pads for
flexible stacking options and easier wire bonding between ASIC and memory
dice.
The memory designs are based on a DFT architecture that includes the Inapac
VIBE™ (Voltage-Induced Burn-in Emulation) technology and SiPLINK™
test circuits, which support economical wafer-level screening and final
testing of memory within the assembled SiP device. Inapac's VIBE
technology provides considerable cost savings relative to high-temperature
dynamic wafer-level burn-in testing because it does not require specialized
testing equipment. After assembly, the memory portion of the SiP can be
thoroughly tested through the SiPLINK test gateway to ensure that quality
and reliability targets are maintained.
Inapac's unique SiPFLOW methodology, combined with an IP-based business
model, delivers cost efficiencies, quality and reliability beyond
traditional KGD (Known-Good Die) approaches.
About Inapac
Inapac Technology, Inc. is a leading provider of memory technology and
services for SiP (system-in-package) and MCP (multi-chip-package)
solutions. Inapac provides IP and services based on a DFT
(design-for-test) production methodology to deliver reliable,
cost-effective memories. Products based on the company's proven
SiPFLOW™ platform are licensed to semiconductor companies to enhance the
performance, quality and reliability of products in the cell phone,
consumer audio/video, digital imaging, and storage markets.
Inapac is headquartered in San Jose, California, with additional offices in
Boise, Idaho, and Hsin-chu, Taiwan. For more information, visit the
company's website at www.inapac.com.