ROHM’s New 1200V IGBTs Achieve Industry-Leading Low Loss Characteristics with High Short-Circuit Tolerance
November 07, 2024 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine...
ROHM’s New N-Channel MOSFETs Offer High Mounting Reliability in Automotive Applications
September 19, 2024 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Sept. 19, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new N-channel MOSFETs (RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB) featuring low ON-resistance...
New ISO 26262 Functional Safety Packages Simplify Design of ASIL B and ASIL C Safety Applications Using dsPIC®, PIC18 and AVR® Microcontrollers
October 20, 2021 08:00 ET
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Microchip Technology Inc.
CHANDLER, Ariz., Oct. 20, 2021 (GLOBE NEWSWIRE) -- Safety is a primary concern in automotive applications to ensure reliable operation and end users’ wellbeing. Microchip Technology Inc. (Nasdaq:...
ROHM Introduces Hybrid IGBTs with Built-In SiC Diode
July 19, 2021 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. The...
Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability
March 16, 2020 08:09 ET
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Microchip Technology Inc.
CHANDLER, Ariz., March 16, 2020 (GLOBE NEWSWIRE) -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to...