ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by...

[Latest] Global Silicon Carbide Semiconductor Market Size/Share Worth USD 11,783.1 Million by 2033 at a 18.5% CAGR: Custom Market Insights (Analysis, Outlook, Leaders, Report, Trends, Forecast, Segmentation, Growth, Growth Rate, Value) Austin, TX, USA, Oct. 21, 2024 (GLOBE NEWSWIRE) -- Custom Market Insights has published a new research report titled “Silicon Carbide Semiconductor Market Size, Trends and Insights By Component...

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse...

ROHM Expands Its Lineup of Compact, Market-Proven, High Efficiency Schottky Barrier Diodes for Automotive Applications Santa Clara, CA and Kyoto, Japan, Nov. 02, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its expanded portfolio of Schottky barrier diodes (SBDs) with 24 new compact, high efficiency...

ROHM Introduces Hybrid IGBTs with Built-In SiC Diode Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. The...